PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 37

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

72
Small-signal MOSFETs
Small-signal MOSFETs single (N-channel) < 50 V
1)
2)
Package
Size (mm)
P
enhanced thermal capability
max values
V
tot
DS
12
20
30
(mW)
(V)
V
GS
12
15
12
15
20
8
8
8
(V)
I
D
3.76
1.05
2.28
2.15
1.78
0.85
1.87
0.87
5.7
6.3
5.7
5.7
2.5
5.9
5.7
4.1
4.9
4.9
0.8
0.9
5.4
5.4
5.2
5.4
4.6
4.7
2.5
1.7
10
1.9
1
1
6
(A)
V
min(V)
GS
0.45
0.65
0.65
0.45
0.45
0.45
0.45
0.45
0.45
0.35
0.4
0.4
0.4
0.5
0.5
0.5
0.4
0.5
0.5
1.5
1.5
1
1
2
1
1
1
1
1
1
1
1
1
(th)
V
max(V)
GS
0.95
0.95
1.5
1.5
1.5
1.5
1.5
2.8
2.8
-
4
-
-
-
-
-
1
2
2
-
-
-
1
2
2
2
2
2
2
2
-
-
(th)
t
on
14.5
14.5
(ns)
11.5
11.5
11.5
23
23
23
20
35
35
6.5
25
24
24
22
33
33
8.4
16
16
18
16
16
16
12
18
12
12
11
12
14
6
typ
t
off
23.5
23.5
22.5
23.5
(ns)
22.5
19.5
19.5
19.5
21.5
17.8
23.5
67
71
71
66
84
84
65
37
17
17
35
35
60
50
27
27
44
44
44
41
36
31
typ
Q
(nC)
G
10.1
10.6
10.6
0.89
0.89
0.72
0.72
13.1
13.1
0.89
0.89
0.65
0.65
13.8
7.4
5.4
5.4
5.8
9.9
9.3
6.1
6.1
9.4
8.8
9.4
6.4
4.6
4.6
24
typ
-
-
-
-
protection
ESD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10 V
117
28
55
32
20
31
32
35
40
47
77
74
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2)
R
DSon
4.5 V
400
190
250
280
290
390
400
350
140
270
370
370
102
117
120
28
23
27
30
56
56
31
34
70
38
40
40
30
38
42
45
49
60
typ (mΩ) @ V
2)
2)
2.5 V
440
460
520
550
550
77
77
44
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
gs
=
1.8 V
600
240
420
460
550
580
39
37
39
44
54
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2)
SOT223 (SC-73)
6.5 x 3.5 x 1.65
BSP030
BSP100
1700
Small-signal MOSFETs
SOT457 (SC-74)
2.9 x 1.5 x 1.0
PMN28UN
PMN23UN
PMN27UN
PMN34LN
PMN55LN
PMN34UN
PMN40LN
PMN38EN
PMN45EN
PMN49EN
TSOP6
600
2.9 x 1.3 x 1.0
PMV30UN
PMV56XN
PMV31XN
PMV40UN
PMV45EN
PMV60EN
PMV117EN
SI2302DS
SI2304DS
SOT23
BSH105
BSH103
BSH108
250
1)
1)
1)
1)
1)
1)
SOT363 (SC-88)
2.0 x 1.25 x 0.95
PMG370XN
300
SOT323 (SC-70)
2.0 x 1.25 x 0.95
PMF280UN
PMF290XN
PMF400UN
PMF370XN
200
SOT416 (SC-75)
1.6 x 0.8 x 0.77
PMR280UN
PMR290XN
PMR400UN
PMR370XN
150
SOT883 (SC-101)
1.0 x 0.6 x 0.5
PMZ250UN
PMZ270XN
PMZ390UN
PMZ350XN
250
73