PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 38

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

74
Small-signal MOSFETs
Small-signal MOSFETs single (N-channel) ≥ 50 V
1)
2)
3)
Package
Size (mm)
P
enhanced thermal capability
max values
@ V
V
tot
100
200
220
240
250
300
DS
50
55
60
(mW)
gs
(V)
= 5 V
V
GS
20
10
13
15
30
16
20
30
20
20
20
20
20
8
(V)
0.385
I
0.335
0.475
0.375
0.26
0.34
0.57
0.55
1.22
0.25
0.19
0.52
0.85
0.15
0.55
0.35
0.35
D
0.3
4.9
3.5
2.5
2.5
0.3
0.3
0.3
0.3
0.3
3.5
3.5
0.4
8.8
0.1
1.9
7.3
3
(A)
V
min(V)
GS
0.4
0.4
0.4
0.8
0.4
0.8
0.8
0.8
0.8
1
1
1
1
1
1
1
1
2
1
2
2
1
1
1
2
1
1
1
1
1
1
1
2
2
2
(th)
V
max(V)
GS
1.8
1.3
1.3
3.3
2.5
2.5
2.5
2.5
2.5
2.5
2.8
2.8
2
2
2
4
-
-
-
3
3
3
2
-
4
4
4
4
2
4
4
2
2
2
-
(th)
t
on
10.5
20.8
tbd
tbd
(ns)
2.5
2.5
2.5
21
16
14
19
10
18
2
4
4
-
-
-
-
3
3
3
6
6
6
-
3
3
3
-
6
6
6
6
typ
t
off
tbd
tbd
12.5
24.3
(ns)
7.2
7.2
7.2
11
11
60
11
11
11
73
12
12
13
12
31
45
49
26
47
47
46
5
-
-
-
-
9
9
9
-
-
typ
Q
(nC)
1.09
1.05
1.05
0.69
0.69
13.3
13.2
G
tbd
tbd
4.6
7.4
1
1
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ
protection
ESD
2KV
2KV
2KV
2KV
3KV
2KV
1KV
1KV
yes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2000
1600
10 V
2800
2800
2800
2800
1100
2500
2800
3500
1700
1600
2800
2800
3700
120
780
780
760
780
780
400
200
213
250
320
57
-
-
-
-
-
-
-
-
2)
2)
R
DSon
3800
3000
3000
7500
4.5 V
2300
2300
3800
3800
3800
1300
1100
1100
1100
1200
1200
3800
5000
5000
200
120
30
65
typ (mΩ) @ V
-
-
-
-
-
-
-
-
-
-
-
-
-
2)
3)
2)
2)
2.5 V
2400
2400
3000
4800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
gs
=
1.8 V
3100
3100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT223 (SC-73)
6.5 x 3.5 x 1.65
PHT4NQ10LT
PHT11N06LT
PHT8N06LT
PHT4NQ10T
PHT6NQ10T
PHT6N06LT
PHT6N06T
BSP110
BSP122
BSP126
BSP130
BSP89
1700
Small-signal MOSFETs
SOT89 (SC-62)
4.5 x 2.5 x 1.5
BSS87
1300
3.3 x 3.3 x 0.85
PML260SN
PML340SN
SOT873
250
2.9 x 1.3 x 1.0
PMV213SN
2N7002CK
2N7002BK
2N7002P
2N7002K
PMBF170
2N7002E
2N7002F
SOT23
2N7002
BSN20
BSH111
BSH112
BSH114
BSS123
BST82
250
1)
SOT323 (SC-70)
2.0 x 1.25 x 0.95
2N7002BKW
PMF3800SN
2N7002PW
PMF780SN
BSH121
200
SOT416 (SC-75)
1.6 x 0.8 x 0.77
2N7002BKT
PMR780SN
2N7002PT
150
types in bold represent new products
SOT883 (SC-101)
1.0 x 0.6 x 0.5
2N7002BKM
2N7002PM
PMZ760SN
250
75