IDD04S60C Infineon Technologies, IDD04S60C Datasheet - Page 2

• Manufacturer Part Number: IDD04S60C
• Description: DIODE SCHOTTKY 600V 4A TO-252
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD04S60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000080224

Rev. 2.0
1)
2)
3)
connection. PCB is vertikal with out blown air.
4)
di/dt), different from t
absence of minority carrier injection.
5)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature
reflowsoldering
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
t
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 5ms at 5 mA.
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
4)
rr
, which is dependent on T
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
T
V
V
I
Q
t
C
R
c
sold
DC
F
thJC
thJA
c
j
, I
SMD version, device
on PCB, minmal
footprint
SMD Version, device
on PCB, 6 cm
cooling
reflow MSL 3
I
I
I
V
V
V
di
T
V
V
V
R
F
F
LOAD
page 2
j
=4 A, T
=4 A, T
R
R
R
R
R
R
=0.05 mA
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f = MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
, di/dt. No reverse recovery time constant t
3)
j
j
=25 °C
=150 °C
2
F
(one layer, 70µm thick) copper area for drain
≤I
j
j
=25 °C
=150 °C
2
F,max
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
130
1.7
0.5
20
20
2
2
8
-
-
-
-
-
-
max.
j
260
500
<10
, I
IDD04S60C
4.1
1.9
2.4
75
50
50
-
-
-
-
-
LOAD
rr
due to
and
Unit
K/W
°C
V
µA
nC
ns
pF
2006-04-03