IDD04S60C Infineon Technologies, IDD04S60C Datasheet - Page 3

• Manufacturer Part Number: IDD04S60C
• Description: DIODE SCHOTTKY 600V 4A TO-252
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD04S60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000080224

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
40
35
30
25
20
15
10
F
5
0
8
7
6
5
4
3
2
1
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
1
75
100
T
C
-55ºC
175ºC
V
[°C]
2
F[V]
125
25ºC
100ºC
150
3
150ºC
175
200
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
9
8
7
6
5
4
3
2
1
0
40
30
20
10
C
F
0
25
); T
); t
0
p
j
=400 µs; parameter: T
≤175 °C
50
thJC(max)
2
100ºC
75
; V
F(max)
-55ºC
25ºC
100
4
T
C
V
[°C]
F[V]
125
150ºC
j
6
175ºC
150
IDD04S60C
8
175
2006-04-03
200
10