IDD04S60C Infineon Technologies, IDD04S60C Datasheet - Page 4

• Manufacturer Part Number: IDD04S60C
• Description: DIODE SCHOTTKY 600V 4A TO-252
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD04S60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000080224

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
=f(I
10
10
20
18
16
14
12
10
8
6
4
2
0
-1
-2
1
0
10
p
0
F
)
), T
-5
0.02
single pulse
0.05
0.2
0.5
0.1
C
=100 °C, parameter: D =t
p
/T
10
0.1
2
-4
0.2
I
F(AV)
t
10
P
4
[s]
-3
0.5
[A]
10
p
6
/T
-2
1
10
page 4
8
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
200
175
150
125
100
10
10
10
10
10
10
75
50
25
R
R
0
-1
-2
-3
-4
1
0
); T
10
)
100
-1
C
=25 °C, f =1 MHz
j
200
10
0
-55 °C
300
25 °C
V
V
R
10
R
100 °C
[V]
[V]
150 °C
1
175 °C
400
10
IDD04S60C
2
500
2006-04-03
10
600
3