IDD10SG60C Infineon Technologies, IDD10SG60C Datasheet - Page 3

• Manufacturer Part Number: IDD10SG60C
• Description: DIODE SCHOTTKY 600V 10A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD10SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.1V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 90µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 290pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 2.1V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 51A
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 16.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000608030; SP000786814

Rev. 2.0
1 Power dissipation
P
3 Typ. forward characteristic
I
F
tot
=f(V
=f(T
120
100
80
60
40
20
20
15
10
F
0
5
0
); t
C
25
0
); parameter: R
p
=400 µs; parameter:T
50
1
75
thJC(max)
T
V
C
100
F
-55 °C
2
[°C]
[V]
175 °C
j
100 °C
25 °C
150 °C
125
3
150
175
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
80
70
60
50
40
30
20
10
80
60
40
20
F
C
0
0
); t
)
25
4)
0
; T
p
=400 µs; parameter: T
0.1
0.5
0.3
0.7
1
j
≤175 °C; parameter: D = t
50
2
75
175 °C
100 °C
150 °C
T
V
C
100
F
4
[°C]
[V]
25 °C
-55 °C
j
125
IDD10SG60C
p
/T
6
150
2010-03-19
175
8