IDD10SG60C Infineon Technologies, IDD10SG60C Datasheet - Page 4

• Manufacturer Part Number: IDD10SG60C
• Description: DIODE SCHOTTKY 600V 10A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD10SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.1V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 90µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 290pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 2.1V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 51A
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 16.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000608030; SP000786814

Rev. 2.0
5 Typ. capacitance charge vs. current slope
Q
7 Typ. transient thermal impedance
Z
thJC
C
=f(di
10
10
=f(t
10
10
20
15
10
-1
-2
5
0
1
0
10
100
F
p
/dt )
); parameter: D = t
-6
0.02
0.1
0.5
0.2
0.05
0.01
6)
0
; I
10
F
≤I
-5
F,max
400
di
10
F
-4
/dt [A/µs]
t
P
p
/T
[s]
10
-3
700
10
-2
10
1000
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
350
300
250
200
150
100
10
10
10
10
10
10
50
R
R
0
-1
-2
-3
-4
); parameter: T
1
0
); T
10
100
-1
150 °C
100 °C
175 °C
25 °C
-55 °C
C
=25 °C, f =1 MHz
200
10
0
j
300
V
V
10
R
R
[V]
[V]
1
400
IDD10SG60C
10
2
500
2010-03-19
10
600
3