IDD10SG60C Infineon Technologies, IDD10SG60C Datasheet - Page 6

• Manufacturer Part Number: IDD10SG60C
• Description: DIODE SCHOTTKY 600V 10A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD10SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.1V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 90µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 290pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 2.1V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 51A
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 16.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000608030; SP000786814

IDD10SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Rev. 2.0
page 6
2010-03-19