HGTP10N120BN Fairchild Semiconductor, HGTP10N120BN Datasheet - Page 3

• Manufacturer Part Number: HGTP10N120BN
• Description: IGBT NPT N-CH 1200V 35A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP10N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
NOTES:
Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
4. Turn-Off Energy Loss (E
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 18.
35
30
25
20
15
10
5
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
t
d(OFF)I
t
d(OFF)I
E
E
E
E
E
E
d(ON)I
d(ON)I
R
ON1
ON2
OFF
ON1
ON2
OFF
t
t
t
t
125
rI
rI
fI
fI
JC
V
CE
GE
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 2mH
Test Circuit (Figure 18)
IGBT and Diode at T
I
V
V
R
L = 2mH
Test Circuit (Figure 18)
CE
CE
150
GE
GE
CE
CE
G
G
= 10
= 10
= 10A
= 10A
= 960V
= 15V
= 960V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
60
50
40
30
20
10
J
J
0
= 25
= 150
0
T
o
J
C
o
C
= 150
200
V
CE
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
o
, COLLECTOR TO EMITTER VOLTAGE (V)
C, R
ON1
J
as the IGBT. The diode type is specified in
400
G
is the turn-on loss of the IGBT only. E
= 10 , V
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
600
GE
= 15V, L = 400 H
TYP
0.32
0.85
1.75
165
100
190
140
800
0.8
0.4
1.1
23
11
21
11
-
1000
MAX
0.42
210
140
250
200
0.4
1.1
1.0
0.5
2.3
1.4
26
15
25
15
1200
UNITS
o
C/W
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
1400
ON2