HGTP10N120BN Fairchild Semiconductor, HGTP10N120BN Datasheet - Page 4

• Manufacturer Part Number: HGTP10N120BN
• Description: IGBT NPT N-CH 1200V 35A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP10N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
100
50
10
1
5
4
3
2
0
1
50
40
30
20
10
0
2
0
T
T
0
P
f
f
R
C
R
MAX1
MAX2
J
C
ØJC
G
= 75
= 150
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
= CONDUCTION DISSIPATION
= 10 , L = 2mH, V
(DUTY FACTOR = 50%)
= 0.42
= 0.05 / (t
= (P
I
o
EMITTER CURRENT
T
EMITTER CURRENT
CE
I
C, V
V
CE
o
C
C, R
CE
, COLLECTOR TO EMITTER CURRENT (A)
= -55
D
T
, COLLECTOR TO EMITTER CURRENT (A)
J
GE
o
2
, COLLECTOR TO EMITTER VOLTAGE (V)
- P
C/W, SEE NOTES
= 150
G
5
C
o
= 15V, IDEAL DIODE
d(OFF)I
= 10 , L = 2mH, V
) / (E
C
o
C, V
ON2
CE
+ t
5
GE
4
T
d(ON)I
+ E
= 960V
J
GE
= 12V, V
= 25
OFF
= 12V
10
)
)
T
o
C, V
C
CE
= 150
110
110
GE
75
75
6
= 960V
GE
T
C
= 15V
o
o
o
o
C
C 12V
C
C 12V
= 12V, V
o
Unless Otherwise Specified (Continued)
10
C
15V
15V
V
T
GE
15
C
= 25
GE
8
o
= 15V
C
20
10
20
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
50
40
30
20
10
25
20
15
10
2.0
1.5
1.0
0.5
0
5
0
12
0
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
R
G
V
T
= 10 , L = 2mH, V
CE
J
EMITTER CURRENT
V
= 150
I
CE
CE
V
T
= 840V, R
GE
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
C
2
13
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
= -55
, GATE TO EMITTER VOLTAGE (V)
o
C, V
5
o
C
G
GE
t
= 10 , T
SC
= 12V OR 15V
CE
4
14
= 960V
T
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
J
J
10
= 125
= 25
T
C
o
o
6
= 25
C, V
C
15
T
C
GE
o
= 150
C
= 12V OR 15V
I
SC
15
o
C
8
GE
16
250
200
150
100
50
= 15V
10
20