HGTP10N120BN Fairchild Semiconductor, HGTP10N120BN Datasheet - Page 8
![IGBT NPT N-CH 1200V 35A TO-220AB](/photos/5/31/53154/261-to-220ab-3_sml.jpg)
HGTP10N120BN
Manufacturer Part Number
HGTP10N120BN
Description
IGBT NPT N-CH 1200V 35A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGT1S10N120BNST.pdf
(8 pages)
Specifications of HGTP10N120BN
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
35A
Power - Max
298W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
35 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
298 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
35 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTP10N120BN
Manufacturer:
ST
Quantity:
3 000
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CROSSVOLT
2
TM
TM
2
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