HGTP10N120BN Fairchild Semiconductor, HGTP10N120BN Datasheet - Page 6

• Manufacturer Part Number: HGTP10N120BN
• Description: IGBT NPT N-CH 1200V 35A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP10N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuit and Waveforms
©2002 Fairchild Semiconductor Corporation
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
4
3
2
1
0
10
10
10
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
0
-1
-2
C
0
FREQUENCY = 1MHz
10
RES
-5
R
0.05
0.02
0.01
G
0.5
0.2
0.1
V
VOLTAGE
= 10
CE
5
, COLLECTOR TO EMITTER VOLTAGE (V)
C
SINGLE PULSE
IES
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
C
OES
10
-4
L = 2mH
15
HGTG10N120BND
+
-
Unless Otherwise Specified (Continued)
V
20
DD
= 960V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
25
DUTY FACTOR, D = t
PEAK T
V
V
I
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
CE
GE
CE
15
12
9
6
3
0
J
0
= (P
10
FIGURE 19. SWITCHING TEST WAVEFORMS
DUTY CYCLE <0.5%, T
PULSE DURATION = 250 s
-2
D
X Z
V
t
CE
d(OFF)I
JC
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
90%
1
, COLLECTOR TO EMITTER VOLTAGE (V)
/ t
X R
10%
2
1
JC
t
fI
) + T
C
C
E
= 110
OFF
90%
P
10
D
2
-1
o
C
V
GE
E
ON2
= 15V
10%
t
d(ON)I
t
1
t
3
t
2
rI
V
GE
= 10V
10
4
0