FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet - Page 2

IGBT NPT 1200V 64A TO264

FGL40N120ANDTU

Manufacturer Part Number
FGL40N120ANDTU
Description
IGBT NPT 1200V 64A TO264
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGL40N120ANDTU

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 40A
Current - Collector (ic) (max)
64A
Power - Max
500W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 25 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
64 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
64A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
500W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FGL40N120ANDTU_NL
FGL40N120ANDTU_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGL40N120ANDTU
Manufacturer:
FSC
Quantity:
4 500
Part Number:
FGL40N120ANDTU
Manufacturer:
FSC
Quantity:
1 875
Part Number:
FGL40N120ANDTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FGL40N120ANDTU
0
Company:
Part Number:
FGL40N120ANDTU
Quantity:
7 500
Company:
Part Number:
FGL40N120ANDTU
Quantity:
5 000
Company:
Part Number:
FGL40N120ANDTU
Quantity:
1 900
FGL40N120AND Rev. A2
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
BV
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
c
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
Symbol
res
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
g
ge
gc
FGL40N120AND
J
CES
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
Voltage
FGL40N120AND
Parameter
Device
Package
TO-264
V
V
V
V
I
I
I
T
I
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
C
C
C
C
GE
GE
CE
GE
C
CE
CC
CC
CE
GE
G
G
= 250µA, V
= 40A, V
= 40A, V
= 64A, V
= 125°C
= 5Ω, V
= 5Ω, V
= 0V, I
= 0V, I
= V
= V
= 30V, V
= 600V, I
= 600V, I
= 600V, I
= 15V
T
Conditions
C
CES
GES
= 25°C unless otherwise noted
2
C
C
GE
GE
GE
GE
GE
, V
, V
= 1mA
= 1mA
GE
C
C
C
CE
= 15V
= 15V,
= 15V
= 15V,
= 15V,
GE
CE
= 40A,
= 40A,
= 40A,
Reel Size
= 0V
= V
C
C
= 0V
= 0V
= 25°C
= 125°C
GE
-
Min.
1200
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Tape Width
-
Typ.
3200
3.15
370
125
120
220
130
110
0.6
5.5
2.6
2.9
2.3
1.1
3.4
2.5
1.8
4.3
15
20
40
20
25
45
25
--
--
--
Max.
±250
3.45
1.65
330
195
7.5
3.2
5.1
80
38
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1
Quantity
www.fairchildsemi.com
25
Units
V/°C
mA
mJ
mJ
mJ
mJ
nA
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V

Related parts for FGL40N120ANDTU