FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet - Page 5

• Manufacturer Part Number: FGL40N120ANDTU
• Description: IGBT NPT 1200V 64A TO264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 64 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 64A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGL40N120ANDTU_NL; FGL40N120ANDTU_NL

FGL40N120AND Rev. A2
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 9. Turn-Off Characteristics vs.
Figure 11. Turn-On Characteristics vs.
6000
5000
4000
3000
2000
1000
1000
100
100
10
10
0
1
0
Common Emitter
V
T
T
Common Emitter
V
T
T
20
GE
C
C
Gate Resistance
C
C
CC
= 25
= 125
= 25
= 125
=
= 600V, V
Collector Current
10
±
15V, R
°
Coss
Ciss
°
C
Crss
°
C
°
C
Collector-Emitter Voltage, V
30
C
G
20
GE
Gate Resistance, R
= 5
Collector Current, I
=
40
Ω
±
15V, I
30
C
= 40A
50
40
60
C
G
10
[A]
Common Emitter
V
T
[
Ω
GE
C
50
CE
]
= 25
= 0V, f = 1MHz
[V]
70
°
C
td(off)
60
td(on)
tr
tf
80
70
(Continued)
5
Figure 8. Turn-On Characteristics vs. Gate
Figure 10. Switching Loss vs. Gate Resistance
Figure 12. Turn-Off Characteristics vs.
100
100
10
10
1
0
0
Common Emitter
V
T
T
Common Emitter
V
I
T
T
20
C
GE
C
C
CC
C
C
Resistance
= 40A
= 25
= 125
= 25
= 125
Collector Current
=
= 600V, V
tr
10
10
±
td(on)
15V, R
°
°
C
C
°
°
C
C
30
G
GE
20
20
Gate Resistance, R
Gate Resistance, R
= 5
Collector Current, I
=
Ω
40
±
15V
30
30
50
40
40
Common Emitter
V
I
T
T
C
CC
C
C
60
= 40A
C
= 25
= 125
G
G
= 600V, V
[A]
[
[
Ω
Ω
50
50
°
]
]
C
°
C
70
GE
60
60
td(off)
tf
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=
Eoff
Eon
±
15V
80
70
70