FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet - Page 3

• Manufacturer Part Number: FGL40N120ANDTU
• Description: IGBT NPT 1200V 64A TO264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 64 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 64A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGL40N120ANDTU_NL; FGL40N120ANDTU_NL

FGL40N120AND Rev. A2
Electrical Characteristics of DIODE
V
t
I
Q
rr
rr
Symbol
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Parameter
I
I
di/dt = 200A/µs
F
F
= 40A
= 40A,
T
Test Conditions
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
130
300
845
3.2
2.7
75
13
8
Max.
112
450
4.0
12
--
--
--
--
www.fairchildsemi.com
Units
nS
nC
V
A