FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet - Page 6

• Manufacturer Part Number: FGL40N120ANDTU
• Description: IGBT NPT 1200V 64A TO264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL40N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 64 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 64A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGL40N120ANDTU_NL; FGL40N120ANDTU_NL

FGL40N120AND Rev. A2
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
Figure 17. Forward Characteristics
0.01
100
0.1
100
0.1
10
0.1
10
10
1
1
1
0.1
0
Common Emitter
V
T
T
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Ic MAX (Continuous)
20
Ic MAX (Pulsed)
C
C
GE
= 25
= 125
=
T
±
J
15V, R
°
= 125
C
°
1
C
30
Collector - Emitter Voltage, V
1
o
G
C
o
C
= 5
Collector Current, I
Forward Voltage , V
Ω
40
2
T
J
= 25
10
DC Operation
50
3
o
C
60
C
F
[A]
4
100
[V]
T
T
1ms
CE
C
C
= 125
= 25
70
[V]
100
5
o
o
C
Eon
Eoff
µ
C
s
1000
80
50
µ
s
6
(Continued)
6
Figure 14. Gate Charge Characteristics
Figure 16. Turn-Off SOA
Figure 18. Reverse Recovery Current
100
16
14
12
10
10
10
8
6
4
2
0
1
8
6
4
2
0
0
1
0
Common Emitter
R
T
C
L
= 15
= 25
10
Ω
°
C
50
Collector-Emitter Voltage, V
di/dt = 200A/
20
10
Forward Current , I
Gate Charge, Q
Safe Operating Area
V
GE
100
= 15V, T
30
µ
s
di/dt = 100A/
Vcc = 200V
C
40
= 125
150
100
g
[nC]
F
o
[A]
C
50
CE
400V
µ
s
[V]
200
600V
60
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1000
250
70