IRG4BC30FD-SPBF International Rectifier, IRG4BC30FD-SPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4BC30FD-SPBF
• Description: IGBT W/DIODE 600V 31A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC30FD-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 17A
• Current - Collector (ic) (max): 31A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 31A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: D2-Pak
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: FAST 1-8 kHz
• Vces (v): 600
• Ic @ 25c (a): 31
• Ic @ 100c (a): 17
• Vce(on)@25c Typ (v): 1.59
• Vce(on)@25c Max (v): 1.80
• Ets Typ (mj): 2.02
• Ets Max (mj): 3.9
• Qrr Typ Nc 25c: 80
• Qrr Max Nc 25c: 180
• Vf Typ: 1.40
• Pd @25c (w): 100
• Environmental Options: PbF and Leaded
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4BC30FD-SPBF

IRG4BC30FD
Electrical Characteristics @ T
Switching Characteristics @ T
V
DV
V
V
DV
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
fe
E
on
off
ts
ts
(BR)CES
CE(on)
GE(th)
g
ies
oes
res
2
FM
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/DT
/DT
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 1100 ----
----
----
----
----
----
----
----
----
----
----
3.0
6.1
----
0.69
1.59
1.99
1.70
0.63
1.39
2.02
230
160
310
310
220
180
120
-11
---- 2500
---- ±100
----
----
----
1.4
1.3
7.9
3.2
7.5
3.5
5.6
10
51
19
42
26
42
27
74
14
42
80
80
250
350
230
120
180
600
----
----
----
---- mV/°C V
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
1.8
6.0
1.7
1.6
3.9
6.0
----
77
12
28
60
10
V/°C
A/µs T
nA
µA
nC
mJ
mJ
nH
nC
V
V
ns
ns
pF
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 17A, T
= 12A, T
= 17A
= 31A
= 12A
= 17A
= 17A, V
= 17A, V
= 25°C
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 15V, R
= 15V, R
= ±20V
= 15V
= 0V
= 400V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
= 150°C
C
C
= 150°C
See Fig.
See Fig.
Conditions
Conditions
= 1.0mA
= 250µA
G
G
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V
= 600V, T
= 23W
= 23W
= 17A
14
15
17
16
See Fig. 8
www.irf.com
See Fig. 7
di/dt 200A/µs
See Fig. 2, 5
See Fig. 13
V
V
J
I
GE
R
F
= 150°C
= 12A
= 200V
= 15V