IXGT40N120B2D1 IXYS, IXGT40N120B2D1 Datasheet - Page 2

no-image

IXGT40N120B2D1

Manufacturer Part Number
IXGT40N120B2D1
Description
IGBT 1200V TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXGT40N120B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
140
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.3
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
25
Rthjc, Max, Diode, (ºc/w)
0.90
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGT40N120B2D1
Manufacturer:
FUJI
Quantity:
1 000
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fS
on
off
on
off
F
ies
oes
res
thJC
thCS
thJC
g
ge
gc
J
J
= 25°C, Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
2. Switching Times may Increase for V
Higher T
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
I
I
V
I
Test Conditions
C
C
F
F
V
C
C
CE
CE
CE
= 30A, V
= 30A, -di/dt = 100A/μs,
= 40A, V
= 40A, V
R
J
= 40A, V
= 40A, V
or Increased R
= 300V,V
= 960V, R
= 960V, R
Test Conditions
= 25V, V
GE
GE
GE
GE
CE
GE
GE
= 0V
= 15V
= 15V
= 15V, V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 0V
= 2
= 2
4,835,592
4,881,106
J
J
G
Ω
Ω
= 25°C
= 125°C
.
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CE
(Clamp) > 0.8 • V
CES
5,049,961
5,063,307
5,187,117
T
T
T
J
J
J
= 150°C
= 100°C
= 100°C
Min.
23
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
CES
Characteristic Values
Typ.
3360
,
0.21
138
290
140
350
420
6,162,665
6,259,123 B1
6,306,728 B1
190
4.5
3.0
6.5
8.3
37
63
55
21
58
20
48
21
Typ.
1.6
100
Max.
0.33
270
6.0
6,404,065 B1
6,534,343
6,583,505
0.9 °C/W
Max.
2.8
4
°C/W
°C/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXGT) Outline
TO-247 (IXGH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXGH40N120B2D1
IXGT40N120B2D1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

Related parts for IXGT40N120B2D1