IXGT40N120B2D1 IXYS, IXGT40N120B2D1 Datasheet - Page 3

• Manufacturer Part Number: IXGT40N120B2D1
• Description: IGBT 1200V TO-268
• Manufacturer: IXYS

Specifications of IXGT40N120B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.3
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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7
6
5
4
3
2
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
5
0.0
0.0
6
0.5
0.5
Fig. 5. Collector-to-Emitter Voltage
7
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.0
1.0
vs. Gate-to-Emitter Voltage
8
1.5
1.5
I
V
V
V
9
C
GE
CE
CE
= 80A
2.0
@ 125ºC
2.0
@ 25ºC
40A
20A
- Volts
- Volts
- Volts
10
2.5
2.5
V
GE
11
V
GE
= 15V
13V
11V
3.0
3.0
= 15V
13V
11V
12
T
3.5
3.5
J
13
= 25ºC
9V
7V
5V
9V
7V
4.0
4.0
14
4.5
4.5
15
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
250
225
200
175
150
125
100
120
100
75
50
25
80
60
40
20
0
0
-50
4.0
0
4.5
Fig. 2. Extended Output Characteristics
-25
2
V
V
T
GE
Fig. 4. Dependence of V
J
GE
5.0
4
= 125ºC
= 15V
= 15V
- 40ºC
0
13V
Fig. 6. Input Admittance
25ºC
Junction Temperature
5.5
T
6
J
- Degrees Centigrade
25
V
6.0
V
8
CE
GE
11V
9V
7V
@ 25ºC
- Volts
- Volts
50
6.5
10
I
C
IXGH40N120B2D1
IXGT40N120B2D1
= 20A
I
C
7.0
12
= 40A
I
75
C
= 80A
CE(sat)
7.5
14
100
8.0
16
on
125
8.5
18
150
9.0
20