IXGT40N120B2D1 IXYS, IXGT40N120B2D1 Datasheet - Page 4

• Manufacturer Part Number: IXGT40N120B2D1
• Description: IGBT 1200V TO-268
• Manufacturer: IXYS

Specifications of IXGT40N120B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.3
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
55
50
45
40
35
30
25
20
15
10
10
5
0
0.0001
0
0
10
f
= 1 MHz
5
20
Fig. 7. Transconductance
30
10
40
Fig. 9. Capacitance
I
15
C
50
- Amperes
V
0.001
CE
T
60
20
- Volts
J
= - 40ºC
70
25ºC
125ºC
25
80
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
90
30
100 110 120
35
0.01
Pulse Width - Seconds
40
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
T
R
dV / dt < 10V / ns
V
I
I
300
J
G
C
G
CE
= 125ºC
0.1
= 2Ω
= 40A
= 10 mA
= 600V
20
400
500
40
Fig. 8. Gate Charge
Q
G
600
V
- NanoCoulombs
CE
60
- Volts
700
IXGH40N120B2D1
IXGT40N120B2D1
80
800
1
900
100
1000 1100 1200
IXYS REF: G_40N120B2(6ZC) 3-30-06
120
140
10