IXGT40N120B2D1 IXYS, IXGT40N120B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGT40N120B2D1
• Description: IGBT 1200V TO-268
• Manufacturer: IXYS

Specifications of IXGT40N120B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.3
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
120
110
100
130
120
110
100
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
20
2
Fig. 20. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
t
R
25ºC < TJ < 125ºC
V
t
T
V
r
G
CE
25
J
r
CE
= 2Ω , V
= 125ºC, V
= 960V
= 960V
3
30
t
d(on)
35
GE
4
t
vs. Collector Current
GE
d(on)
= 15V
vs. Gate Resistance
40
- - - -
= 15V
I
- - - -
C
5
R
- Amperes
45
G
- Ohms
50
6
55
7
I
60
C
= 80A
I
C
65
8
I
= 40A
C
= 20A
70
9
75
10
80
30
29
28
27
26
25
24
23
22
21
20
19
24
23
22
21
20
19
120
110
100
90
80
70
60
50
40
30
20
25
Fig. 19. Inductive Turn-on Switching Times
t
R
V
r
CE
G
35
= 2Ω , V
= 960V
45
vs. Junction Temperature
t
GE
T
d(on)
J
55
= 15V
- Degrees Centigrade
- - - -
65
75
IXGH40N120B2D1
IXGT40N120B2D1
85
95
105
I
I
I
IXYS REF: G_40N120B2(6ZC) 3-30-06
C
C
C
= 80A
= 40A
= 20A
115
125
24
23
22
21
20
19