SGD02N60 Infineon Technologies, SGD02N60 Datasheet - Page 11

• Manufacturer Part Number: SGD02N60
• Description: IGBT NPT 600V 6.0A 30W TO252-3
• Manufacturer: Infineon Technologies

Specifications of SGD02N60

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGD02N60XT

Figure B. Definition of switching losses
Figure A. Definition of switching times
11
p(t)
T (t)
j
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
1
r
1
SGD02N60
SGP02N60
r
2
2
r
2
Rev. 2.3
=180nH
=180pF.
r
n
n
r
n
Sep 07
T
C