SGD02N60 Infineon Technologies, SGD02N60 Datasheet - Page 8

• Manufacturer Part Number: SGD02N60
• Description: IGBT NPT 600V 6.0A 30W TO252-3
• Manufacturer: Infineon Technologies

Specifications of SGD02N60

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGD02N60XT

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
25 s
20 s
15 s
10 s
25V
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 600V, start at T
= 2A)
V
GE
11V
,
Q
GATE
5nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
120V
j
= 25 C)
10nC
13V
14V
15nC
480V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
10pF
40A
30A
20A
10A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
600V,T
V
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
12V
j
,
= 150 C)
GATE
10V
14V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
SGD02N60
SGP02N60
20V
16V
Rev. 2.3
18V
30V
C
C
C
oss
iss
rss
Sep 07
20V