SGD02N60 Infineon Technologies, SGD02N60 Datasheet - Page 5

• Manufacturer Part Number: SGD02N60
• Description: IGBT NPT 600V 6.0A 30W TO252-3
• Manufacturer: Infineon Technologies

Specifications of SGD02N60

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGD02N60XT

8A
7A
6A
5A
4A
3A
2A
1A
0A
Figure 7. Typical transfer characteristics
(V
0V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 5. Typical output characteristics
(T
CE
0V
j
= 25 C)
= 10V)
V
CE
V
V
2V
,
GE
COLLECTOR
G E
1V
,
=20V
15V
13V
11V
GATE
9V
7V
5V
4V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
6V
3V
T
j
+150°C
=+25°C
-55°C
8V
4V
10V
5V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 6. Typical output characteristics
(T
GE
0V
j
= 150 C)
= 15V)
V
CE
-50°C
V
,
T
G E
COLLECTOR
1V
j
,
=20V
JUNCTION TEMPERATURE
15V
13V
11V
9V
7V
5V
0°C
2V
-
EMITTER VOLTAGE
SGD02N60
50°C
SGP02N60
3V
Rev. 2.3
100°C
I
I
C
C
= 4A
= 2A
4V
150°C
Sep 07
5V