IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet
IKP01N120H2
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IKP01N120H2 Summary of contents
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... Soldering temperature, 1.6mm (0.063 in.) from case for 10s 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking C off j 0.09mJ K01H1202 150 C Symbol jmax IKP01N120H2 G PG-TO-220-3-1 Package PG-TO-220-3-1 Value 1200 C E 3.2 1.3 3.5 3.5 3.2 1 -40...+150 260 Rev. 2 Unit Sept ...
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... Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Power Semiconductors Symbol Conditions PG-TO-220-3 Symbol Conditions IKP01N120H2 Max. Value Unit 4.5 K Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 2.0 2 Rev. 2.4 Sept. 07 ...
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... Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode current slope Diode peak rate of fall of reverse recovery current during Leakage inductance L and stray capacity C due to dynamic test circuit in figure E 3) Commutation diode from device IKP01N120H2 Power Semiconductors = Symbol Conditions ...
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... Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Power Semiconductors Symbol Conditions IKP01N120H2 Value Unit min. typ. max 0. 0.044 - Rev. 2.4 Sept. 07 ...
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... C) j Power Semiconductors 10A 0,1A ,01A 10kHz 100kHz 1V Figure 2. Safe operating area ( 125°C 150°C 25°C Figure 4. Collector current as a function of case temperature ( IKP01N120H2 200 s DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors =15V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IKP01N120H2 12V 10V EMITTER VOLTAGE =0.5A C 0°C 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.4 Sept. 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V 241 , CE G dynamic test circuit in Fig. 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.03mA 241 , 7 IKP01N120H2 t d(off d(on 100 150 200 R , GATE RESISTOR G = 150 +15V/0V 1A max. typ. ...
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... Fig.E ) 0.06mJ 0.04mJ 0.02mJ 0.00mJ 100°C 150°C 0V/us Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig 241 , 8 IKP01N120H2 and E include losses on ts due to diode recovery off 50 100 150 200 R , GATE RESISTOR G ...
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... C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 20V 30V Figure 20. Typical turn off behavior, hard switching (V =15/0V Dynamic test circuit in Figure E) 9 IKP01N120H2 U =240V CE U =960V CE 5nC 10nC Q , GATE CHARGE GE 1.0A 0.8A 0.6A 0.4A 0.2A 0.0A 0.0 0.2 0.4 0.6 ...
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... T =25°C J 120uC 100uC 80uC 300Ohm Figure 24. Typical reverse recovery charge as a function of diode current slope (V R Dynamic test circuit in Figure E) 10 IKP01N120H2 D=0 3.668 9.29E-04 0.2 6.401 2.14E-04 0.81 4.81E-03 0 0.05 0. ...
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... I =1A F 2.5V I =0.5A F 2.0V I =0.25A F 1.5V T =25°C J 1.0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IKP01N120H2 T =150° =25°C J 100Ohm 200Ohm 300Ohm R , GATE RESISTANCE G =3A, F 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 2.4 ...
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... Power Semiconductors PG-TO220-3-1 12 IKP01N120H2 Rev. 2.4 Sept. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKP01N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKP01N120H2 14 Rev. 2.4 Sept. 07 ...