IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 11

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
4.0A
3.5A
3.0A
2.5A
4A
2A
0A
0V
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
Figure 27. Typical diode forward current
as a function of forward voltage
R
=800V, I
100O hm
1V
T
V
R
J
F
=25°C
G
,
,
F
FORWARD VOLTAGE
=3A,
GATE RESISTANCE
T
2V
J
=150°C
200O hm
T
3V
J
=150°C
T
J
=25°C
4V
300O hm
5V
11
3.0V
2.5V
2.0V
1.5V
1.0V
-140A/us
-160A/us
-180A/us
-200A/us
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 28. Typical diode forward
voltage as a function of junction
temperature
I
I
F
-50°C
I
R
F
=1A
F
=0.5A
=800V, I
=0.25A
T
J
100Ohm
,
R
JUNCTION TEMPERATURE
0°C
G
,
F
T
=3A,
GATE RESISTANCE
J
=150°C
50°C
IKP01N120H2
T
200Ohm
J
=25°C
100°C
Rev. 2.4
150°C
300Ohm
Sept. 07