IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 3

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
2 )
3)
Power Semiconductors
Commutation diode from device IKP01N120H2
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E
b
b
t
t
t
t
E
E
E
t
Q
I
d i
d i
t
t
t
t
E
E
E
t
Q
I
d i
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
F
r r
F
r r
/ d t
/ d t
/d t
/d t
j
j
=25 C
=150 C
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
C
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
G
G
=2 5 C ,
= 1 A,
=2 5 C ,
=1 5 0 C
= 1 A,
=1 5 0 C
2 )
2 )
2 )
= 8 00 V , I
2 )
= 8 00 V , I
= 24 1 ,
= 24 1
= 24 1 ,
= 24 1
3
= 80 0 V,
= 15 V /0 V ,
= 80 0 V,
= 15 V /0 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
= 1 A,
= 1 A,
3)
3)
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKP01N120H2
Value
Value
Typ.
Typ.
0.08
0.06
0.14
0.11
0.09
370
289
178
450
213
180
240
135
6.3
2.5
8.9
0.2
2.7
13
28
83
89
12
43
Rev. 2.4
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sept. 07
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s