IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 7

IGBT 1200V 50A 365W TO247-3

IHW25N120R2

Manufacturer Part Number
IHW25N120R2
Description
IGBT 1200V 50A 365W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IHW25N120R2

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
365W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Max
365W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
RC Soft Switching Series 8-60 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IHW25N120R2
Quantity:
4 500
Company:
Part Number:
IHW25N120R2
Quantity:
15
Part Number:
IHW25N120R2 H25R1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
Figure 13. Typical turn-off energy as a
Figure 15. Typical turn-off energy as a
6.0mJ
5.0mJ
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
25°C
0A
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
10A
T
CE
GE
50°C
J
I
,
C
,
=600V, V
JUNCTION TEMPERATURE
=0/15V, I
COLLECTOR CURRENT
20A
75°C
30A
C
GE
=25A, R
=0/15V, R
100°C 125°C 150°C
40A
J
CE
=175°C,
=600V,
G
50A
=10Ω,
G
=10Ω,
E
60A
off
Soft Switching Series
E
off
70A
7
Figure 14. Typical turn-off energy as a
Figure 16. Typical turn-off energy as a
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
10Ω
600V
V
CE
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
20Ω
GE
GE
COLLECTOR
=0/15V, I
=0/15V, I
R
G
650V
IHW25N120R2
30Ω
,
GATE RESISTOR
40Ω
C
C
-
=25A,
EMITTER VOLTAGE
=20A, R
700V
J
J
=175°C, V
=175°C,
50Ω
Rev. 2.3
G
E
=10Ω,
off
60Ω
750V
CE
70Ω
=600V,
Nov. 09
E
off
80Ω

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