IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 8

• Manufacturer Part Number: IHW25N120R2
• Description: IGBT 1200V 50A 365W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IHW25N120R2

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 365W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 365W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
15V
10V
10
10
10
Figure 17. Typical gate charge
5V
0V
Figure 19. IGBT transient thermal
resistance
(D = t
-1
-2
-3
K/W
K/W
K/W
0nC
p
10µs
D=0.5
/ T)
0.1
0.2
(I
single pulse
C
=25 A)
25nC
0.01
100µs
Q
t
GE
0.02
P
,
,
PULSE WIDTH
0.05
GATE CHARGE
1ms
50nC
R
0.0183
0.1313
0.1358
0.1257
R , ( K / W )
240V
1
C
1
=
τ
10ms
1
/ R
1
75nC
C
6.66*10
2.85*10
5.49*10
4.51*10
2
=
100ms
τ
960V
τ
, ( s )
2
/ R
Soft Switching Series
R
2
-2
-2
-3
-4
2
8
Figure 18. Typical capacitance as a function
10
10
100pF
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=t
-1
-2
1nF
K/W
K/W
P
0V
/T)
V
10µs
D=0.5
0.2
0.1
CE
of collector-emitter voltage
(V
,
COLLECTOR
GE
single pulse
=0V, f = 1 MHz)
0.01
100µs
t
0.02
P
IHW25N120R2
,
PULSE WIDTH
10V
0.05
-
1ms
EMITTER VOLTAGE
R
0.079
0.1708
0.1263
0.035
R , ( K / W )
1
C
1
=
10ms
Rev. 2.3
τ
1
/ R
20V
1
C
7.66*10
1.24*10
8.56*10
7.52*10
100ms
2
τ
=
τ
, ( s )
2
/ R
Nov. 09
R
2
-2
-2
-4
-5
C
C
C
2
oss
iss
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