IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 9

• Manufacturer Part Number: IHW25N120R2
• Description: IGBT 1200V 50A 365W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IHW25N120R2

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 365W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 365W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
45A
40A
35A
30A
25A
20A
15A
10A
5A
0A
Figure 21. Typical diode forward current as
a function of forward voltage
0.0V
0.5V
V
F
,
T
FORWARD VOLTAGE
J
=25°C
175°C
1.0V
1.5V
2.0V
Soft Switching Series
9
2.0V
1.5V
1.0V
0.5V
0.0V
Figure 22. Typical diode forward voltage
as a function of junction temperature
0°C
T
J
,
JUNCTION TEMPERATURE
IHW25N120R2
50°C
100°C
Rev. 2.3
I
F
=50A
25A
12.5A
150°C
Nov. 09