IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 9
![IGBT 1200V 50A 365W TO247-3](/photos/22/7/220717/ge3to24705-40_sml.jpg)
IHW25N120R2
Manufacturer Part Number
IHW25N120R2
Description
IGBT 1200V 50A 365W TO247-3
Manufacturer
Infineon Technologies
Datasheet
1.IHW25N120R2.pdf
(12 pages)
Specifications of IHW25N120R2
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
365W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Max
365W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
RC Soft Switching Series 8-60 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IHW25N120R2 H25R1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
45A
40A
35A
30A
25A
20A
15A
10A
5A
0A
Figure 21. Typical diode forward current as
a function of forward voltage
0.0V
0.5V
V
F
,
T
FORWARD VOLTAGE
J
=25°C
175°C
1.0V
1.5V
2.0V
Soft Switching Series
9
2.0V
1.5V
1.0V
0.5V
0.0V
Figure 22. Typical diode forward voltage
as a function of junction temperature
0°C
T
J
,
JUNCTION TEMPERATURE
IHW25N120R2
50°C
100°C
Rev. 2.3
I
F
=50A
25A
12.5A
150°C
Nov. 09