BUP213 Infineon Technologies, BUP213 Datasheet - Page 5

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BUP213

Manufacturer Part Number
BUP213
Description
IGBT 1200V 32A TO-220
Manufacturer
Infineon Technologies
Datasheets

Specifications of BUP213

Package / Case
TO-220AB
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
32A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
32 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
Other names
BUP213IN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUP213
Manufacturer:
SIEMENS
Quantity:
2 005
Part Number:
BUP213
Manufacturer:
FSC
Quantity:
30 000
Infineon
Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
C
parameter: t
C
parameter: t
I
I
C
C
= f ( V
= f ( V
30
24
22
20
18
16
14
12
10
30
24
22
20
18
16
14
12
10
A
A
8
6
4
2
0
8
6
4
2
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f ( V
30
24
22
20
18
16
14
12
10
A
8
6
4
2
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
Nov-30-1995
BUP 213
V
V
CE
5

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