BUP213 Infineon Technologies, BUP213 Datasheet - Page 6

• Manufacturer Part Number: BUP213
• Description: IGBT 1200V 32A TO-220
• Manufacturer: Infineon Technologies

Specifications of BUP213

• Package / Case: TO-220AB
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 32A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 32 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP213IN

Typ. switching losses
E = f ( I
Infineon
Typ. switching time
I = f ( I
par.: V
Semiconductor Group
E
par.: V
t
mWs
10
10
10
C
10
ns
C
CE
8
7
6
5
4
3
2
1
0
) , inductive load , T
CE
) , inductive load , T
3
2
1
0
0
= 600 V, V
= 600 V, V
5
5
10
10
GE
GE
15
15
= ± 15 V, R
= ± 15 V, R
20
20
j
j
= 125°C
= 125°C
25
25
30
G
30
G
Eon
Eoff
tdoff
tr
tdon
tf
= 82
= 82
A
I
C
A
I
C
40
40
6
Typ. switching losses
E = f ( R
Typ. switching time
t = f ( R
par.: V
E
par.: V
t
mWs
10
10
10
10
ns
CE
8
7
6
5
4
3
2
1
0
G
G
CE
3
2
1
0
0
) , inductive load ,
) , inductive load , T
= 600V, V
= 600 V, V
50
50
100
100
GE
GE
= ± 15 V, I
= ± 15 V, I
150
150
T
j
j
= 125°C
= 125°C
200
200
C
C
= 15 A
= 15 A
Nov-30-1995
BUP 213
R
R
G
G
Eon
Eoff
tdoff
tdon
tr
tf
300
300