FDS8960C Fairchild Semiconductor, FDS8960C Datasheet

MOSFET N/P-CH DUAL 35V 8-SOIC

FDS8960C

Manufacturer Part Number
FDS8960C
Description
MOSFET N/P-CH DUAL 35V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS8960C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 5V
Input Capacitance (ciss) @ Vds
570pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
23 S, 9 S
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 20 V @ N Channel or +/- 25 V @ P Channel
Continuous Drain Current
7 A @ N Channel or 5 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
7A
Drain Source Voltage Vds
35V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Operating Temperature Range
-55°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8960C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8960C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 638
Part Number:
FDS8960C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS8960C
Dual N & P-Channel PowerTrench
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C1(W)
Absolute Maximum Ratings
V
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Symbol
J
DSS
DS(Avalanche)
GSS
D
θJA
θJC
, T
Device Marking
STG
FDS8960C
Semiconductor’s
SO-8
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum)
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
SO-8
D
advanced
D2
- Continuous
- Pulsed
D
FDS8960C
D2
Device
Parameter
S1
S
G1
PowerTrench
S
S2
S
G2
T
G
A
= 25°C unless otherwise noted
®
Reel Size
MOSFET
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 3)
(Note 1)
Features
Q1:
7.0A, 35V
Q2:
–5A, –35V
Fast switching speed
RoHS compliant
N-Channel
P-Channel
5
6
7
8
Q1
±20
35
40
20
7
Tape width
R
R
R
R
–55 to +150
12mm
DS(on)
DS(on)
DS(on)
DS(on)
Q2
Q1
1.6
0.9
78
40
2
1
= 0.024Ω @ V
= 0.032Ω @ V
= 0.053Ω @ V
= 0.087Ω @ V
November 2005
Q2
–35
–40
±25
–20
–5
4
3
2
1
www.fairchildsemi.com
GS
GS
GS
GS
2500 units
Quantity
= 10V
= 4.5V
= –10V
= –4.5V
Units
°C/W
°C/W
°C
W
V
V
V
A

Related parts for FDS8960C

FDS8960C Summary of contents

Page 1

... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device FDS8960C FDS8960C ©2005 Fairchild Semiconductor Corporation FDS8960C Rev C1(W) ® MOSFET Features • Q1: PowerTrench 7.0A, 35V • Q2: –5A, –35V • Fast switching speed • ...

Page 2

... Gate Threshold Voltage GS(th) ΔT Temperature Coefficient J R Static Drain-Source DS(on) On-Resistance g Forward Transconductance FS Dynamic Characteristics C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss R Gate Resistance G FDS8960C Rev C1( 25°C unless otherwise noted A Test Conditions – =– 250 μ –250 μ ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. FDS8960C Rev C1(W) (continued 25°C unless otherwise noted A Test Conditions Q1 V ...

Page 4

... T , JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature - 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS8960C Rev C1(W) 2.6 2.4 3.5V 2 3.5V GS 1.8 1.6 1.4 3.0V 1.2 1 0.8 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.065 0.055 0.045 0.035 ...

Page 5

... 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.001 0.01 0 TIME (sec) 1 Figure 11. Single Pulse Maximum Peak Current FDS8960C Rev C1(W) 800 = 10V 15V 700 600 20V 500 400 300 200 100 C rss Figure 8. Capacitance Characteristics. 50 100 μ 1ms 10ms ...

Page 6

... JUNCTION TEMPERATURE ( J Figure 15. On-Resistance Variation with Temperature - - 1.5 2 2 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics. FDS8960C Rev C1(W) 3.4 3 3.5V GS 2.8 2.6 2.4 2.2 2 -3.5V 1.8 1.6 1.4 -3.0V 1.2 1 0 Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. ...

Page 7

... 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 21. Maximum Safe Operating Area 0.001 0.01 0 TIME (sec) 1 Figure 23. Single Pulse Maximum Peak Current FDS8960C Rev C1(W) 800 700 -15V 600 -20V 500 400 300 200 100 C RSS Figure 20. Capacitance Characteristics. 50 100 μ 1ms 10ms 30 ...

Page 8

... Typical Characteristics 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. FDS8960C Rev C1(W) 0.01 0 TIME (sec ( θ JA θ 135 C/W θ JA P(pk) ...

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