FDS8960C Fairchild Semiconductor, FDS8960C Datasheet - Page 5

• Manufacturer Part Number: FDS8960C
• Description: MOSFET N/P-CH DUAL 35V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8960C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 570pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 23 S, 9 S
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 7 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 35V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Operating Temperature Range: -55°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8960C

Typical Characteristics: Q1 (N-Channel)
FDS8960C Rev C1(W)
0.01
40
30
20
10
100
0.1
0
0.001
10
Figure 9. Maximum Safe Operating Area.
10
1
Figure 11. Single Pulse Maximum Peak
8
6
4
2
0
0.1
Figure 7. Gate Charge Characteristics.
0
R
SINGLE PULSE
R
DS(ON)
I
θ JA
D
V
T
= 7A
GS
A
= 135
= 25
0.01
LIMIT
= 10V
2
o
o
C/W
C
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
1
Q
4
g
Current
, GATE CHARGE (nC)
t
1
, TIME (sec)
DC
1
10s
6
1s
V
100ms
DS
= 10V
10
10ms
10
8
SINGLE PULSE
R
θ JA
20V
1ms
T
A
= 135°C/W
= 25°C
100
10
100 μ s
15V
1000
100
12
100
800
700
600
500
400
300
200
100
10
1
0
50
40
30
20
10
Figure 12. Unclamped Inductive Switching
0.01
0
0.001
0
Figure 8. Capacitance Characteristics.
C
rss
Figure 10. Single Pulse Maximum
T
J
5
0.01
= 25
C
oss
o
V
C
Power Dissipation.
DS
10
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
0.1
Capability
0.1
, TIME IN AVANCHE(ms)
C
iss
t
15
1
, TIME (sec)
1
20
10
1
25
SINGLE PULSE
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R
θ JA
T
A
= 135°C/W
= 25°C
100
f = 1 MHz
V
GS
30
= 0 V
1000
10
35