FDS8960C Fairchild Semiconductor, FDS8960C Datasheet - Page 2

• Manufacturer Part Number: FDS8960C
• Description: MOSFET N/P-CH DUAL 35V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8960C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 570pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 23 S, 9 S
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 7 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 35V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Operating Temperature Range: -55°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8960C

E
I
BV
ΔBV
I
I
I
I
I
V
ΔV
R
g
C
C
C
R
FDS8960C Rev C1(W)
Electrical Characteristics
Drain-Source Avalanche Ratings
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
AS
DSS
GSSF
GSSR
GSSR
GSSF
FS
AS
GS(th)
DS(on)
iss
oss
rss
G
ΔT
ΔT
DSS
GS(th)
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Avalanche
Energy (Single Pulse)
Drain-Source Avalanche
Current
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
D
D
V
V
V
V
V
I
I
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 250 μA, Referenced to 25°C
= –250 µA, Referenced to 25°C
DD
DD
GS
GS
DS
DS
GS
GS
GS
GS
f = 1.0 MHz
= 250 μA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= V
= V
= 10 V,
= 4.5 V,
= 10 V, I
= –10 V,
= –4.5 V,
= –10 V, I
= 5 V,
= –5 V,
= 15 V, V
= –15 V, V
= 35 V,
= –35 V, I
= 0 V,
= 0 V,
= 28 V,
= –28 V,
= 20 V,
= –20 V,
= 25 V,
= –25 V,
GS
GS
T
Test Conditions
A
,
,
= 25°C unless otherwise noted
GS
D
D
I
GS
D
D
= 7 A, T
= 0 V, f = 1.0 MHz
= –5 A, T
= 7 A, L = 1 mH
=–5 A, L = 1 mH
I
I
V
V
V
V
V
V
I
I
I
I
I
I
I
= 0 V, f = 1.0 MHz
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
DS
DS
= 250 μA
= –250 μA
= 250 μA
= –250 µA
= 7 A
= 6 A
= –5 A
I
= 7 A
=–5 A
D
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= –4 A
J
= 125°C
J
= 125°C
Type Min Typ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–35
–1
35
1
–1.8
–40
570
540
126
113
–5
20
25
29
44
70
61
23
52
60
–5
31
2
4
9
2
6
7
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Max Units
–100
–100
24.5
12.5
100
100
–3
24
32
37
53
87
79
–1
1
3
mV/°C
mV/°C
mΩ
mJ
mJ
μA
nA
nA
nA
nA
pF
pF
pF
Ω
A
V
V
S