FDS8960C Fairchild Semiconductor, FDS8960C Datasheet - Page 4
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FDS8960C
Manufacturer Part Number
FDS8960C
Description
MOSFET N/P-CH DUAL 35V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS8960C.pdf
(8 pages)
Specifications of FDS8960C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 5V
Input Capacitance (ciss) @ Vds
570pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
23 S, 9 S
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 20 V @ N Channel or +/- 25 V @ P Channel
Continuous Drain Current
7 A @ N Channel or 5 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
7A
Drain Source Voltage Vds
35V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Operating Temperature Range
-55°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8960C
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS8960C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 638
Part Number:
FDS8960C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: Q1 (N-Channel)
FDS8960C Rev C1(W)
1.8
1.6
1.4
1.2
0.8
0.6
30
25
20
15
10
20
16
12
Figure 3. On-Resistance Variation with
5
0
8
4
0
1
1.5
Figure 1. On-Region Characteristics.
-50
0
Figure 5. Transfer Characteristics.
V
V
GS
V
DS
6.0V
= 10V
I
GS
D
= 5V
-25
= 7A
= 10V
V
V
GS
0.5
T
DS
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
4.5V
2.5
25
50
1
T
A
= -55
75
3.5V
3.5
o
C
100
o
1.5
125
C)
o
C
25
125
3.0V
o
C
4.5
150
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.065
0.055
0.045
0.035
0.025
0.015
0.001
0.01
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
10
2
1
1
0
2
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 3.5V
= 0V
3
Gate-to-Source Voltage.
0.2
V
T
A
SD
4
V
= 25
, BODY DIODE FORWARD VOLTAGE (V)
GS
4.0V
4
, GATE TO SOURCE VOLTAGE (V)
o
C
I
0.4
D
T
, DRAIN CURRENT (A)
A
4.5V
5
= 125
8
T
A
o
C
= 125
0.6
6
5.0V
25
o
C
o
12
C
7
0.8
www.fairchildsemi.com
6.0V
-55
8
o
C
16
I
D
1
= 3.5A
9
10V
1.2
20
10