FDS8960C Fairchild Semiconductor, FDS8960C Datasheet - Page 4

• Manufacturer Part Number: FDS8960C
• Description: MOSFET N/P-CH DUAL 35V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8960C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 570pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 23 S, 9 S
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 7 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 35V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Operating Temperature Range: -55°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8960C

Typical Characteristics: Q1 (N-Channel)
FDS8960C Rev C1(W)
1.8
1.6
1.4
1.2
0.8
0.6
30
25
20
15
10
20
16
12
Figure 3. On-Resistance Variation with
5
0
8
4
0
1
1.5
Figure 1. On-Region Characteristics.
-50
0
Figure 5. Transfer Characteristics.
V
V
GS
V
DS
6.0V
= 10V
I
GS
D
= 5V
-25
= 7A
= 10V
V
V
GS
0.5
T
DS
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
4.5V
2.5
25
50
1
T
A
= -55
75
3.5V
3.5
o
C
100
o
1.5
125
C)
o
C
25
125
3.0V
o
C
4.5
150
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.065
0.055
0.045
0.035
0.025
0.015
0.001
0.01
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
10
2
1
1
0
2
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 3.5V
= 0V
3
Gate-to-Source Voltage.
0.2
V
T
A
SD
4
V
= 25
, BODY DIODE FORWARD VOLTAGE (V)
GS
4.0V
4
, GATE TO SOURCE VOLTAGE (V)
o
C
I
0.4
D
T
, DRAIN CURRENT (A)
A
4.5V
5
= 125
8
T
A
o
C
= 125
0.6
6
5.0V
25
o
C
o
12
C
7
0.8
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6.0V
-55
8
o
C
16
I
D
1
= 3.5A
9
10V
1.2
20
10