SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

Si5515DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.0
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
I
J
D
T
- Temperature (°C)
25
J
= 250
= 150 °C
0.6
50
µA
75
0.8
T
J
0.01
= 25 °C
100
100
0.1
10
1
0.1
Limited
1.0
I
* V
Limited by R
D(on)
125
GS
Single Pulse
T
> minimum V
A
150
V
1.2
= 25 °C
DS
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
I
DM
Limited
0.10
0.08
0.06
0.04
0.02
0.00
DS(on)
10
50
40
30
20
10
0
10
0
is specified
-4
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
On-Resistance vs. Gate-to-Source Voltage
I
10
D
= 2 A
-3
1
V
100
GS
10
Single Pulse Power
-2
- Gate-to-Source Voltage (V)
I
D
= 4.4 A
2
10
Time (s)
-1
S10-0547-Rev. C, 08-Mar-10
Document Number: 72221
1
3
10
4
100
600
5