SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

1206-8 ChipFETR
Document Number: 71151
15-Jan-04
NOTES:
1.
2.
3.
4.
5.
S
All dimensions are in millimeaters.
Mold gate burrs shall not exceed 0.13 mm per side.
Leadframe to molded body offset is horizontal and vertical shall not exceed
0.08 mm.
Dimensions exclusive of mold gate burrs.
No mold flash allowed on the top and bottom lead surface.
8
1
e
7
2
D
4
6
3
b
5
4
ECN: C-03528—Rev. F, 19-Jan-04
DWG: 5547
Dim
c1
E
A
D
b
c
E
e
L
S
1
4
1.825
Min
A
1.00
0.25
2.95
1.55
0.28
0.1
2X 0.10/0.13 R
0
MILLIMETERS
E
1
E
0.65 BSC
0.55 BSC
5_Nom
Nom
0.30
0.15
3.05
1.90
1.65
−
−
−
Max
0.038
1.975
1.10
0.35
0.20
3.10
1.70
0.42
c
0.039
0.010
0.004
0.116
0.072
0.061
0.011
Min
0
INCHES
0.0256 BSC
0.022 BSC
5_Nom
Nom
0.012
0.006
0.120
0.075
0.065
L
−
−
−
x
0.0015
Max
0.043
0.014
0.008
0.122
0.078
0.067
0.017
5
4
Package Information
DETAIL X
Backside View
6
3
Vishay Siliconix
7
2
8
1
www.vishay.com
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