SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72221
S10-0547-Rev. C, 08-Mar-10
15
12
0.01
9
6
3
0
0.01
0.1
0.1
0
2
1
2
1
10
10
-4
-4
0.05
0.2
0.02
0.1
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
1
V
Single Pulse
DS
Output Characteristics
- Drain-to-Source Voltage (V)
V
10
GS
2
-3
= 5 V thru 3 V
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
4
2.5 V
1.5 V
2 V
1 V
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
5
-2
10
-1
10
1
15
12
-1
9
6
3
0
0.0
0.5
V
GS
Transfer Characteristics
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
- Gate-to-Source Voltage (V)
1.0
DM
JM
- T
1
t
A
1
= P
t
1.5
Vishay Siliconix
2
DM
Z
thJA
thJA
100
T
t
t
Si5515DC
1
2
C
(t)
2.0
25 °C
= - 55 °C
= 90 °C/W
www.vishay.com
2.5
600
125 °C
10
3.0
5