FDS8928A Fairchild Semiconductor, FDS8928A Datasheet - Page 3

MOSFET N/P-CH DUAL 30/20V 8SOIC

FDS8928A

Manufacturer Part Number
FDS8928A
Description
MOSFET N/P-CH DUAL 30/20V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS8928A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
30V, 20V
Current - Continuous Drain (id) @ 25° C
5.5A, 4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
20 S, 13 S
Drain-source Breakdown Voltage
30 V @ N Channel or 20 V @ P Channel
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
5.5 A @ N Channel or 4 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8928ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8928A
Manufacturer:
FSC
Quantity:
2 486
Part Number:
FDS8928A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS8928A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
Electrical Characteristics
SWITCHING CHARACTERISTICS
Symbol
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
D(on)
r
D(off)
f
S
SD
g
gs
gd
design while R
Scale 1 : 1 on letter size paper
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
CA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
is determined by the user's board design.
(continued)
a. 78
pad of 2oz copper.
(Note 2)
O
C/W on a 0.5 in
2
Conditions
V
V
V
V
V
V
V
V
V
V
DS
GS
DS
GS
DS
GS
DS
GS
GS
GS
= -10 V, I
= 6 V, I
= 10 V, I
= -5 V, I
= 4.5 V , R
= -4.5 V , R
= 4.5 V
= -5 V
= 0 V, I
= 0 V, I
S
S
D
D
= 1.3 A
= -1.3 A
= 1 A
D
D
= -4 A,
= -1 A
= 5.5 A,
GEN
GEN
= 6
= 6
b. 125
(Note 2)
pad of 2oz copper.
(Note 2)
O
C/W on a 0.02 in
2
Type
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min
Typ
19.8
260
-0.7
2.8
6.3
3.2
19
23
42
13
90
20
0.68
6
8
2
c. 135
pad of 2oz copper.
O
C/W on a 0.003 in
Max
-1.3
-1.2
360
125
1.3
1.2
12
16
31
37
67
24
28
28
JC
is guaranteed by
FDS8928A Rev. B
Units
nC
nC
nC
ns
ns
ns
ns
A
A
V
V
2

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