FDS8928A Fairchild Semiconductor, FDS8928A Datasheet - Page 4

MOSFET N/P-CH DUAL 30/20V 8SOIC

FDS8928A

Manufacturer Part Number
FDS8928A
Description
MOSFET N/P-CH DUAL 30/20V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS8928A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
30V, 20V
Current - Continuous Drain (id) @ 25° C
5.5A, 4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
20 S, 13 S
Drain-source Breakdown Voltage
30 V @ N Channel or 20 V @ P Channel
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
5.5 A @ N Channel or 4 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8928ATR

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
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Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
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Manufacturer:
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Typical Electrical Characteristics: N-Channel
20
16
12
8
4
0
1.8
1.6
1.4
1.2
0.8
0.6
30
24
18
12
0
Figure 3. On-Resistance Variation
6
0
1
-50
0
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
V
3.0V
V
V
I = 5.5 A
GS
D
GS
DS
= 4.5V
= 4.5 V
=5V
-25
0.5
V
GS
1
2.5V
with Temperature.
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
0
V
J
DS
1
, DRAIN-SOURCE VOLTAGE (V)
25
2.0V
2
T = -55°C
1.5
A
50
1.5V
75
3
2
125°C
25°C
100
2.5
4
125
3
150
5
0.075
0.025
0.05
0.0001
0.1
0.001
1.6
1.2
0.8
0
0.01
2
0.1
1
20
0
1
Figure 6. Body Diode Forward Voltage
Figure 4. On-Resistance Variation with
0
V
V
Figure 2. On-Resistance Variation with
GS
GS
= 0V
= 2.0V
0.2
V
6
SD
V
GS
2
, BODY DIODE FORWARD VOLTAGE (V)
Variation with Source Current
, GATE TO SOURCE VOLTAGE (V)
and Temperature.
Drain Current and Gate Voltage.
T = 125°C
Gate-to-Source Voltage.
A
2.5 V
I
D
0.4
, DRAIN CURRENT (A)
12
25°C
3.0V
3
0.6
-55°C
T = 125°C
A
18
3.5 V
0.8
25°C
4
24
4.5V
I = 3A
D
1
FDS8928A Rev. B
1.2
30
5

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