FDS8928A Fairchild Semiconductor, FDS8928A Datasheet - Page 8

• Manufacturer Part Number: FDS8928A
• Description: MOSFET N/P-CH DUAL 30/20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8928A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 20 S, 13 S
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 5.5 A @ N Channel or 4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8928ATR

Typical Thermal Characteristics: N & P-Channel
0.005
0.002
0.001
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
Figure 21. Transient Thermal Response Curve.
0.02
0.001
0.01
Transient thermalresponse will change depending on the circuit board design.
Single Pulse
Thermal characterization performed using the conditions described in note 1.
0.01
0.1
t , TIME (sec)
1
(continued)
1
P(pk)
10
T - T
R
Duty Cycle, D = t /t
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= 135 °C/W
JA
1
100
(t)
JA
2
300
FDS8928A Rev. B