FDS8928A Fairchild Semiconductor, FDS8928A Datasheet - Page 5

• Manufacturer Part Number: FDS8928A
• Description: MOSFET N/P-CH DUAL 30/20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8928A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 20 S, 13 S
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 5.5 A @ N Channel or 4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8928ATR

Typical Electrical Characteristics: N-Channel
0.03
0.01
5
4
3
2
1
0
0.3
0.1
0
50
10
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate Charge Characteristics.
3
1
I = 5.5A
0.1
D
R
SINGLE PULSE
JA
0.2
V
=135 °C/W
T = 25°C
GS
A
5
= 4.5V
V
0.5
DS
Q
g
, DRAI N-SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
10
1
2
V
DS
15
= 5V
5
10V
15V
10
20
20 30
25
50
(continued)
3000
1000
30
25
20
15
10
500
200
5
0
0.01
80
30
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
0.1
f = 1 MHz
V
Dissipation.
GS
= 0V
0.1
V
DS
0.4
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.5
1
2
10
5
R
SINGLE PULSE
JA
T = 25°C
A
=135 °C/W
10
50 100
C oss
C rss
C iss
FDS8928A Rev. B
30
300