QS6M4TR Rohm Semiconductor, QS6M4TR Datasheet
QS6M4TR
Specifications of QS6M4TR
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QS6M4TR Summary of contents
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Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Structure Silicon P-channel MOSFET Silicon N-channel MOSFET Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage ...
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Transistors Electrical characteristics (Ta=25°C) <Tr1. N-ch MOSFET> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward ...
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Transistors Electrical characteristics (Ta=25°C) <Tr2. P-ch MOSFET> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward ...
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Transistors N-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C rss C oss 10 1 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (A) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 =10V V ...
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Transistors P-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C oss C rss 10 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 = −10V ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...