QS6M4TR Rohm Semiconductor, QS6M4TR Datasheet - Page 5

• Manufacturer Part Number: QS6M4TR
• Description: MOSFET N+P 30,20V 1.5A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6M4TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 80pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1250 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
P-ch
Electrical characteristic curves
0.001
10000
1000
0.01
1000
100
0.1
100
10
10
10
10
0.01
1
Fig.4 Typical Transfer Characteristics
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Fig.1 Typical Capacitance
GATE-SOURCE VOLTAGE : −V
DRAIN-SOURCE VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : −I
vs. Drain-Source Voltage
0.1
On-State Resistance
vs. Drain Current (Ι)
1
1
V
Pulsed
V
Pulsed
10
D
DS
GS
Ta=25°C
f=1MHz
V
(A)
GS
= −10V
= −4.5V
GS
C
C
=0V
C
DS
oss
rss
(V)
iss
(V)
100
10
1000
100
10000
500
400
300
200
100
1000
10
100
1
0.01
10
0
0.1
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
GATE-SOURCE VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
t
d (off)
Fig.8 Static Drain-Source
DRAIN CURRENT : −I
2
DRAIN CURRENT : −I
On-State Resistance vs.
Gate-Source Voltage
t
f
On-State Resistance
vs. Drain Current (ΙΙ)
t
0.1
r
I
4
I
D
D
t
= −1.5A
= −0.75A
d (on)
1
6
1
8
Ta=25°C
V
V
R
Pulsed
D
DD
GS
D
G
V
Pulsed
Ta=25°C
Pulsed
(A)
=10Ω
(A)
= −15V
= −4.5V
GS
10
GS
= −4V
(V)
10
10
12
0.01
10000
0.1
1000
10
100
8
7
6
5
4
3
2
1
0
1
10
Fig.3 Dynamic Input Characteristics
0.0
0
0.1
SOURCE-DRAIN VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
TOTAL GATE CHARGE : Qg (nC)
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
0.5
DRAIN CURRENT : −I
0.5
1.0
Source-Drain Voltage
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.B
1.5
1.0
1
2.0
QS6M4
2.5
1.5
V
Pulsed
Ta=25°C
V
I
R
Pulsed
D
D
Ta=25°C
V
Pulsed
GS
DD
= −1.5A
G
(A)
=10Ω
GS
= −2.5V
= −15V
3.0
=0V
SD
(V)
5/5
3.5
2.0
10