QS6M4TR Rohm Semiconductor, QS6M4TR Datasheet - Page 3

• Manufacturer Part Number: QS6M4TR
• Description: MOSFET N+P 30,20V 1.5A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6M4TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 80pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1250 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
<Tr2. P-ch MOSFET>
<Tr2. P-ch MOSFET>
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
−0.7
−20
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
0.85
155
170
310
270
3.0
0.8
40
35
10
12
45
20
−
−
−
−
−
−
Max.
Max.
−1.2
−2.0
±10
215
235
430
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
R
V
V
I
S
D
D
D
D
D
D
= −0.75A / V
GS
DS
DS
DS
DS
GS
GS
DD
GS
= −1mA / V
= −1.5A / V
= −1.5A / V
= −0.75A / V
= −0.75A, V
L
= −1.5A
=20Ω / R
= ±12V / V
= −20V / V
= −10V / I
= −10V / I
= −10V
=0V
= −4.5V
= −4.5V
−15V
Conditions
Conditions
G
=10Ω
GS
GS
GS
D
D
R
R
DD
GS
GS
GS
DS
=−1mA
= −0.75A
=0V
= −4.5V
= −4.0V
L
G
=10Ω
=0V
=0V
=0V
= −2.5V
=10Ω
−15V
Rev.B
QS6M4
3/5