TPC8406-H(TE12LQ,M Toshiba, TPC8406-H(TE12LQ,M Datasheet - Page 10

• Manufacturer Part Number: TPC8406-H(TE12LQ,M
• Description: MOSFET N/P-CH 40V 6.5A SOP-8
• Manufacturer: Toshiba

Specifications of TPC8406-H(TE12LQ,M

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8406-HTE12LQMTR

N-Channel
100
0.1
10
1
0.1
Curves must be derated linearly
with increase in temperature.
* Single - pulse
I D max (Pulse) *
Ta = 25°C
Drain-source voltage V
1000
Safe operating area
100
0.1
1
10
0.001
1
Single - pulse
10 ms *
Single-device value at dual
operation (Note 3b)
0.01
V DSS max
10
DS
1 ms *
(V)
0.1
100
Pulse width t
10
r
th
– t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
w
w
(s)
10
100
単発パルス
(1)
1000
(4)
(3)
(2)
TPC8406-H
2009-09-29