TPC8406-H(TE12LQ,M Toshiba, TPC8406-H(TE12LQ,M Datasheet - Page 8

• Manufacturer Part Number: TPC8406-H(TE12LQ,M
• Description: MOSFET N/P-CH 40V 6.5A SOP-8
• Manufacturer: Toshiba

Specifications of TPC8406-H(TE12LQ,M

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8406-HTE12LQMTR

N-Channel
100
0.1
10
30
25
20
15
10
10
1
5
0
8
6
4
2
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
4.5
5
6
10
Drain-source voltage V
Gate-source voltage V
1
Ta = −55°C
0.2
100
Drain current I
2
25
1
4
3.8
0.4
⎪Y
I
I
D
D
25
fs
– V
– V
⎪ – I
Ta = −55°C
3
3.4
3.2
DS
GS
D
0.6
D
10
4
GS
DS
100
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.6 V
0.8
(V)
(V)
5
3.1
2.9
2.8
3
2.7
100
1.0
6
8
300
100
0.5
0.4
0.3
0.2
0.1
30
10
20
16
12
3
0
8
4
0
0.1
0
0
Common source
Ta = 25°C
Pulse test
4.5
5
6
10
Drain-source voltage V
Gate-source voltage V
2
0.4
Drain current I
4
1
R
4
V
DS (ON)
0.8
I
DS
D
– V
3.8
– V
6
V GS = 10 V
4.5 V
DS
3.6
GS
– I
1.2
D
D
10
8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = 2.6 V
TPC8406-H
I D = 6.5 A
1.6
(V)
(V)
2009-09-29
10
3.3
1.7
3.4
3.2
2.8
3
12
2.0
100