TPC8406-H(TE12LQ,M Toshiba, TPC8406-H(TE12LQ,M Datasheet - Page 5

• Manufacturer Part Number: TPC8406-H(TE12LQ,M
• Description: MOSFET N/P-CH 40V 6.5A SOP-8
• Manufacturer: Toshiba

Specifications of TPC8406-H(TE12LQ,M

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8406-HTE12LQMTR

P-Channel
100
−30
−25
−20
−15
−10
−10
0.1
10
−5
−8
−6
−4
−2
1
0
−0.1
0
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−4.5
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−0.2
−1
Ta = −55°C
25
Drain current I
100
−1
−4
−0.4
−2
⎪Y
I
I
D
D
25
fs
– V
– V
−3.4
⎪ – I
DS
−3.2
GS
Ta = −55°C
−0.6
−3
D
−3
D
−10
GS
DS
100
(A)
Common source
Ta = 25°C
Pulse test
V GS = −2.4 V
−0.8
−4
(V)
(V)
−2.8
−2.7
−2.6
−2.5
−100
−1.0
−5
5
−0.5
−0.4
−0.3
−0.2
−0.1
300
100
−20
−16
−12
30
10
−8
−4
0
3
−0.1
0
0
0
Common source
Ta = 25°C
Pulse test
−4.5
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−2
−0.4
Drain current I
−4
−1
R
−4
−0.8
V
DS (ON)
I
DS
D
– V
−6
– V
V GS = −10 V
−3.4
−4.5 V
DS
GS
−1.2
– I
D
−3.2
D
−10
−8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = −2.4 V
I D = −6.5 A
−1.6
(V)
(V)
TPC8406-H
−10
−3.3
−1.7
2009-09-29
−3.0
−2.8
−2.6
−100
−12
−2