AOP609 Alpha & Omega Semiconductor Inc, AOP609 Datasheet - Page 4

• Manufacturer Part Number: AOP609
• Description: MOSFET N/P-CH COMPL 60V 8-PDIP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOP609

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 30V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1142-1; 785-1142-1; 785-1142-5

AOP609
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
100.0
10.0
1.0
0.1
10
8
6
4
2
0
0.01
0.1
0.1
0
10
0.00001
1
Figure 9: Maximum Forward Biased Safe
R
limited
DS(ON)
T
T
Figure 7: Gate-Charge Characteristics
J(Max)
A
=25°C
1
D=T
T
R
J,PK
θJA
=150°C
Operating Area (Note E)
=50°C/W
on
=T
V
I
D
0.0001
/T
DS
= 4.7A
A
1
+P
2
=30V
DM
V
DS
.Z
Q
Single Pulse
10s
DC
θJA
g
(Volts)
3
(nC)
10ms
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
0.1s
θJA
0.001
1s
10
4
100µs
1ms
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
5
0.01
10µs
100
Pulse Width (s)
6
0.1
40
30
20
10
800
600
400
200
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
0
0.01
1
C
Figure 8: Capacitance Characteristics
oss
10
P
D
0.1
T
Ambient (Note E)
C
Pulse Width (s)
on
20
rss
10
T
V
DS
1
(Volts)
30
C
iss
10
100
T
T
40
J(Max)
A
=25°C
=150°C
100
50
1000
1000
60